Micross has announced the release of a 1 gigabit magnetoresistive RAM (MRAM) component, the company’s highest-density part to date – and one that it thinks will demonstrate the future of spintronics for high-reliability computing under challenging settings. The compact Micross chip, which comes in 18x20mm ceramic land-grid array (LGA) and ball-grid array (BGA) formats, is the company’s highest-density MRAM part yet, part of the company’s efforts to persuade a variety of markets that spintronics-based MRAM.
It stores data as magnetic elements rather than electric charges or current flows is the superior choice for high-reliability electronics. Even though Micross provides an SRAM-compatible interface, the new part doesn’t replace dynamic or static RAM. Instead, the business promotes MRAM as a flash storage option with inherent resistance to “hard conditions,” which explains the company’s target industries of aerospace, defense, space, and industrial.
Avalanche, the company behind the MRAM in Micross‘ device, first introduced spin-transfer torque magnetoresistive RAM (STT-MRAM) technology in 2015, using a 55nm process at the time but aiming for a shift to a sub-10nm process as manufacturing capabilities improved. The part uses a 22nm version of Avalanche’s STT-MRAM technology, which probably helped the businesses achieve the astonishing density gains exhibited in the current release: a sixty-four-fold increase over’ previous MRAM part, which carried only 16Mb.
Jeremy Adams, vice president of products and services at, claimed, “Avalanche’s next-gen 22nm Perpendicular Spin Transfer Torque MRAM technology has enabled Micross to provide greater SWaP [Size, Weight, and Power] savings through the addition of our 1Gb Hermetic MRAM to’ hi-reliability memory portfolio.”